Strain and curvature engineering of electronic properties in atomic-layer materials
Susumu Saito
Department of Physics
Advanced Research Center for Quantum Physics and Nanoscience, and Materials Research Center for Element Strategy
Tokyo Institute of Technology, Japan
Abstract: Electronic properties of carbon nanotubes are known to depend not only on the network topology (chirality and formal radius) but also on the detailed values of geometrical parameters. The latter gives rise to open the possibilities for strain engineering of their electronic properties. I will address the geometry-dependent electronic properties of BN nanotubes and transition-metal-dichalcogenide (TMD) nanotubes as well as those of hexagonal BN (h-BN) sheet and TMD sheets, and discuss the possibilities of strain and curvature engineering of these materials. In the case of h-BN atomic layers, modifications of the ionization energies of substitutional impurities by strain and curvature are found to be sizable, and the material is proven to be a promising candidate for future nanoelectronics device material.
Link to Prof. Saito's web page
Cette conférence est présentée par le RQMP Versant Nord du Département de physique de l'Université de Montréal et de Génie physique de la Polytechnique.
